advanced power n-channel enhancement mode electronics corp. power mosfet lower gate charge bv dss 30v simple drive requirement r ds(on) 50m fast switching characteristic i d 3.2a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value units rthj-a maximum thermal resistance, junction-ambient 150 /w data and specifications subject to change without notice 3.2 total power dissipation 12 2.6 pulsed drain current 1 0.83 continuous drain current continuous drain current halogen-free product AP20T03GT-HF rating thermal data parameter storage temperature range -55 to 150 201301081 1 operating junction temperature range -55 to 150 30 parameter drain-source voltage gate-source voltage + 20 advanced power mosfets utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost- effectiveness device. the to-92 package is widely used for all commercial-industrial applications. g d s g d s to-92 free datasheet http:///
AP20T03GT-HF electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =3a - - 50 m ? v gs =4.5v, i d =2a - - 80 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =5v, i d =3a - 4 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 10 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =3a - 4 6.4 nc q gs gate-source charge v ds =15v - 1.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 2 - nc t d(on) turn-on delay time v ds =15v - 4 - ns t r rise time i d =1a - 9 - ns t d(off) turn-off delay time r g =3.3 ? -14- ns t f fall time v gs =10v - 2 - ns c iss input capacitance v gs =0v - 300 480 pf c oss output capacitance v ds =25v - 70 - pf c rss reverse transfer capacitance f=1.0mhz - 50 - pf r g gate resistance f=1.0mhz - 1.6 3.2 ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =0.69a, v gs =0v - - 1.2 v t rr reverse recovery time i s =3a, v gs =0 v , - 16 - ns q rr reverse recovery charge di/dt=100a/s - 9 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 free datasheet http:///
a p20t03gt-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 35 45 55 65 75 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =2a t a =25 o c 0 4 8 12 16 20 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7 .0v 5 .0v 4.5 v v g =3.0v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =3a v g = 10v 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0 4 8 12 16 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 7.0v 5.0v 4.5v v g = 3.0v free datasheet http:///
ap20t03gt-h f fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0 2 4 6 8 02468 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds = 15 v i d = 3a 0 100 200 300 400 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 150 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 0 1 10 100 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc t d(on) t r t d(off) t f v ds v gs 10% 90% operation in this area limited by r ds(on) q v g 4.5v q gs q gd q g charge free datasheet http:///
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